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www.irf.com 1 2/8/10 IRFH5304PBF hexfet power mosfet notes through are on page 8 pqfn 5x6 mm features and benefits applications ? control mosfet for buck converters features benefits ab so l ute m ax i mum r at i n g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c( bo t t o m) = 25c continuous drain current, v gs @ 10v i d @ t c ( bo t t o m ) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dis sipation p d @ t c ( bo tt om ) = 25c power dis sipation linear derating factor w/c t j oper ati ng junctio n and t stg storage temperature range -55 to + 150 3.6 0.029 46 max. 22 50 320 20 30 17 79 v w a c note form q uantit y irfh5304trpbf p q fn 5mm x 6mm ta p e and reel 4000 irfh5304tr2pbf p q fn 5mm x 6mm ta p e and reel 400 orderabl e part number package type standard pack v ds 30 v r ds(on) max (@v gs = 10v) 4.5 m q g (typical) 16 nc i d (@t c ( bottom ) = 25c) 79 a low char g e ( t yp ical 16nc ) lower switchin g losses low thermal resistance to pcb ( <2.7c/w ) increased power densit y 100% r g tested increased reliabilit y low profile ( <0.9 mm ) results in increased power densit y industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturin g rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, industrial qualification increased reliability

2 www.irf.com s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 2.7 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.8 4.5 ??? 5.8 6.8 v gs(th) gate threshold voltage 1.35 1.8 2.35 v v gs(th) gate threshold voltage coefficient ??? -6.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 5.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 88 ??? ??? s q g total gate charge ??? 41 ??? nc q g total gate charge ??? 16 24 q gs1 pre-vth gate-to-source charge ??? 3.6 ??? q gs2 post-vth gate-to-source charge ??? 2.7 ??? q gd gate-to-drain charge ??? 5.8 ??? q godr gate charge overdrive ??? 3.9 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 8.5 ??? q oss output charge ??? 9.8 ??? nc r g gate resistance ??? 1.2 ??? t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 25 ??? t d(off) turn-off delay time ??? 12 ??? t f fall time ??? 6.6 ??? c iss input capacitance ??? 2360 ??? c oss output capacitance ??? 510 ??? c rss reverse transfer capacitance ??? 220 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? 0.71 ??? v v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 19 29 ns q rr reverse recovery charge ??? 44 66 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 50 a a 79 ??? ??? 320 ??? ??? na ns pf nc conditions see fig.15 max. 46 47 ? = 1.0mhz v ds = 15v ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 47a mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 47a v gs = 0v v ds = 10v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 49a t j = 25c, i f = 47a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 5a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 47a, v gs = 0v v gs = 4.5v, i d = 47a v gs = 4.5v typ. ??? r g =1.8 v ds = 15v, i d = 47a v ds = 24v, v gs = 0v, t j = 125c m a i d = 47a

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 150c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.8v vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.8v vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 47a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 47a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , casetemperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a i d = 50 a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs , gate-to-source voltage (v) 0 4 8 12 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 47a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.5a 14a bottom 47a

6 www.irf.com fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s

www.irf.com 7 pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for footprint and stencil design recommendations, please refer to application note an-1154 at http://www .irf.com/technical-info/appnotes/an-1 154.pdf

8 www.irf.com pqfn tape and reel qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.041mh, r g = 50 , i as = 47a. pulse width 400 s; duty cycle 2%. r is measured at
when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 2/2010 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) note: for the most current drawing please refer to ir website at: http://www .irf.com/package/

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